Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3662966
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3. Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation
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