Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
2. Materials Department, University of California, Santa Barbara, California 93106-5050, United States
Funder
Stanford University
Semiconductor Research Corporation
National Science Foundation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b19619
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4. Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers
5. Work function engineering using lanthanum oxide interfacial layers
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