Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond-Reference-Cited by-同舟云学术

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Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

Published: Issue: Volume: Page:
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Container-title:2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.
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Author:

Narayanan V.,Paruchuri V.,Bojarczuk N.,Linder B.,Doris B.,Kim Y.,Zafar S.,Stathis J.,Brown S.,Arnold J.,Copel M.,Steen M.,Cartier E.,Callegari A.,Jamison P.,Locquet J.-P.,Lacey D.,Wang Y.,Batson P.,Ronsheim P.,Jammy R.,Chudzik M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/11173/35986/01705275.pdf?arnumber=1705275

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits;Japanese Journal of Applied Physics;2018-03-16

2. Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics;ACS Applied Materials & Interfaces;2018-01-30

3. Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs;Microelectronic Engineering;2011-05

4. Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers;Microelectronic Engineering;2009-07

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