Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs-Reference-Cited by-同舟云学术

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Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs

Published:2011-05 Issue:5 Volume:88 Page:569-572
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Baudot S.,Caubet P.,Grégoire M.,Bianchi R.A.,Pantel R.,Zoll S.,Gros-Jean M.,Boujamaa R.,Normandon P.,Leroux C.,Ghibaudo G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Design of ion-implanted MOSFET's with very small physical dimensions

2. Focus C Tables, 2009, .

3. Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanical and Tribological Properties of NbAl, NbAlN, and NbAIN-CH Coatings Deposited using Various Niobium Target Currents and Acetylene Flow Rates;Journal of Materials Engineering and Performance;2022-01-20

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