Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface-Reference-Cited by-同舟云学术

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Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface

Published:2019-12-11 Issue:1 Volume:2 Page:25-34
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Pal Nila¹,Sharma Anand¹,Acharya Vishwas¹,Chourasia Nitesh K.¹,Biring Sajal²,Pal Bhola N.¹²^ORCID

Affiliation:

1. School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005, India

2. Organic Electronics Research Center and Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City, Taiwan 243

Funder

Ministry of Science and Technology

Science and Engineering Research Board

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00641

Reference45 articles.

1. High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

2. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

3. High k Gate Dielectrics

4. High-κ gate dielectrics: Current status and materials properties considerations

5. Ultrathin high-K gate stacks for advanced CMOS devices

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