The role of barrier layer on Ohmic performance of Ti∕Al-based contact metallizations on AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2218766
Reference21 articles.
1. Fabrication and performance of GaN electronic devices
2. Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
3. Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors
4. Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide
5. Electronic structures and doping of InN,InxGa1−xN, andInxAl1−xN
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1. Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN;Applied Physics Letters;2024-06-03
2. Evolution of surface microstructure of Re‐Al‐Ni‐Au based ohmic contacts on n‐type GaN;Applied Research;2024-01-21
3. Evaluation of Ti/Al/Ni/Au ohmic contact to n-AlGaN with different Ti/Al thickness for deep ultraviolet light emitting diode;Solid-State Electronics;2023-10
4. A high thermal stability ohmic contact for GaN-based devices;Nanoscale Advances;2023
5. Low Specific Contact Resistivity of 10−3Ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate;IEEE Transactions on Electron Devices;2022-10
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