Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1347003
Reference18 articles.
1. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
2. An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz
3. Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs
4. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
5. High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
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