High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts-Reference-Cited by-同舟云学术

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High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

Published:1998-11-23 Issue:21 Volume:73 Page:3147-3149
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Ching-Hui,Keller Stacia,Parish Gia,Vetury Ramakrishna,Kozodoy Peter,Hu Evelyn L.,Denbaars Steven P.,Mishra Umesh K.,Wu Yifeng

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.122701

Reference9 articles.

1. Emerging gallium nitride based devices

2. Wide bandgap semiconductor materials and devices

3. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

4. GaN microwave electronics

5. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

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