Evaluation of Ti/Al/Ni/Au ohmic contact to n-AlGaN with different Ti/Al thickness for deep ultraviolet light emitting diode-Reference-Cited by-同舟云学术

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Evaluation of Ti/Al/Ni/Au ohmic contact to n-AlGaN with different Ti/Al thickness for deep ultraviolet light emitting diode

Published:2023-10 Issue: Volume:208 Page:108752
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Yang Yin,Xiong Feibing,Lin Hongyi,Li Shitao,Yang Weibing,Luo Xin

Funder

Natural Science Foundation of Fujian Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies;Mondal;Mater. Res. Bull.,2021

2. Ohmic contacts to Gallium Nitride materials;Greco;Appl Sur Sc,2016

3. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency;Takano;Appl Phys Exp,2017

4. AlGaN photonics: recent advances in materials and ultraviolet devices;Li;Adv Opt Photo,2018

5. Electrical Characterization and Surface Morphology of Optimized Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HEMTs;Bardwell;J. Electrochem. Soc.,2006

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low contact resistivity at the 10−4 Ω cm2 level fabricated directly on n-type AlN;Applied Physics Letters;2024-08-19

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