Nitride passivation of the interface between high-k dielectrics and SiGe-Reference-Cited by-同舟云学术

Nitride passivation of the interface between high-k dielectrics and SiGe

Published:2016-01-04 Issue:1 Volume:108 Page:011604
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sardashti Kasra,Hu Kai-Ting,Tang Kechao,Madisetti Shailesh,McIntyre Paul,Oktyabrsky Serge,Siddiqui Shariq,Sahu Bhagawan,Yoshida Naomi,Kachian Jessica,Dong Lin,Fruhberger Bernd^ORCID,Kummel Andrew C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939460

Reference26 articles.

1. New materials for post-Si computing

2. III–V compound semiconductor transistors—from planar to nanowire structures

3. (Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations

4. Considerations for Ultimate CMOS Scaling

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