1. Gate stack technology for nanoscale devices;Lee;Mater. Today,2006
2. High-K materials and metal gates for CMOS applications;Robertson;Mater. Sci. Eng. R Rep.,2015
3. High-k/Ge MOSFETs for future nanoelectronics;Kamata;Mater. Today,2008
4. Gate stack high-κ materials for Si-based MOSFETs past, present, and futures, Microelectron;Mohsenifar;Solid State Electron.,2015
5. Y. Kim, G. Gebara, M. Freiler, J. Barnett, D. Riley, J. Chen, K. Torres, J. Lim, B. Foran, F. Shaapur, A. Agarwal, P. Lysaght, G.A. Brown, C. Young, S. Borthakur, H. Li, B. Nguyen, P. Zeitzoff, G. Bersuker, D. Derro, R. Bergmann, R.W. Murto, A. Hou, H.R. Huff, E. Shero, C. Pomarede, M. Givens, M. Mazanec, C. Werkhoven, Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode, IEDM Tech. Digest (2001) 20.2.1–20.2.4.