NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs-Reference-Cited by-同舟云学术

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NH₃ PDA Temperature-Impact on Low-Frequency Noise Behavior of Si_0.7Ge_0.3 pFinFETs

Published:2022-12 Issue:12 Volume:69 Page:6985-6990
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xie Duan¹^ORCID,Simoen Eddy²^ORCID,Arimura Hiroaki²,Capogreco Elena²^ORCID,Mitard Jerome²,Horiguchi Naoto²

Affiliation:

1. School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an, China

2. imec, Leuven, Belgium

Funder

Shaanxi Provincial Innovation Team Project

Xi’an Municipal Sciences Plan Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09926045.pdf?arnumber=9926045

Reference43 articles.

1. EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

2. Investigation of ALD or PVD (Ti-rich vs. N-rich) TiN metal gate thermal stability on HfO2 high-K;wu;VLSI Tech Dig,2010

3. Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis

4. DC Performance Variations of SOI FinFETs with Different Silicide Thickness

5. Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

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