Kinetics and mechanism of wet oxidation of GexSi1−x alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356368
Reference19 articles.
1. Novel oxidation process in Ge+‐implanted Si and its effect on oxidation kinetics
2. Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation
3. Wet oxidation of GeSi strained layers by rapid thermal processing
4. Diffusion versus oxidation rates in silicon‐germanium alloys
5. Oxidation of Si1−xGexalloys at atmospheric and elevated pressure
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1. Textured Ni(Pt) Germanosilicide Formation on a Condensed Si[sub 1−x]Ge[sub x]/Si Substrate;Journal of The Electrochemical Society;2009
2. Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers;Applied Surface Science;2006-11
3. A Study on the Formation Processes and Microstructures of Ni Germanosilicide Films on Si[sub 1−x]Ge[sub x](x=0.1 and 0.2);Journal of The Electrochemical Society;2006
4. High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation;Applied Physics Letters;2004-05-03
5. Origin of charge trapping in germanium nanocrystal embedded SiO2 system: Role of interfacial traps?;Journal of Applied Physics;2004-03-15
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