Diffusion versus oxidation rates in silicon‐germanium alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105528
Reference9 articles.
1. Oxidation of silicon-germanium alloys
2. Novel oxidation process in Ge+‐implanted Si and its effect on oxidation kinetics
3. Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation
4. Oxidation of Strained Si-Ge Layers Grown by MBE
5. Oxidation studies of SiGe
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