Oxidation of silicon-germanium alloys-Reference-Cited by-同舟云学术

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Oxidation of silicon-germanium alloys

Published:1972-12 Issue: Volume:17 Page:288-297
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Margalit S.,Bar-Lev A.,Kuper A.B.,Aharoni H.,Neugroschel A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium

2. D. Sc. Thesis;Margalit,1971

3. Epitaxial growth of silicon-germanium single crystals

4. Surface Microtopography;Tolansky,1960

5. Westinghouse Res. Lab.;Booker;Scientific Paper 62-126-453-P1,1062

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1. Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor;Nanomaterials;2023-02-04

2. Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant;Journal of Applied Physics;2022-07-21

3. The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins;ACS APPL MATER INTER;2022

4. The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins;ACS Applied Materials & Interfaces;2022-06-16

5. Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires;Nano Letters;2021-09-28

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