Novel oxidation process in Ge+‐implanted Si and its effect on oxidation kinetics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98385
Reference5 articles.
1. General Relationship for the Thermal Oxidation of Silicon
2. The Effects of Trace Amounts of Water on the Thermal Oxidation of Silicon in Oxygen
3. A Mass Spectrometric Method for the Determination of Dissociation Energies of Diatomic Molecules
4. Thermodynamic Study of SiC Utilizing a Mass Spectrometer
5. Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon
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