Influence of oxide density on O2 diffusivity in thermally grown SiO2 on Si and SiGe and on oxidation kinetics-Reference-Cited by-同舟云学术

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Influence of oxide density on O2 diffusivity in thermally grown SiO2 on Si and SiGe and on oxidation kinetics

Published:2019-05-21 Issue:6 Volume:34 Page:065023
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Rozé Fabien^ORCID,Gergaud Patrice,Jaouen Nicolas,Gourhant Olivier,Blanquet Elisabeth,Bertin François

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab1228/pdf

Reference21 articles.

1. Academic and industry research progress in germanium nanodevices

2. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

3. General Relationship for the Thermal Oxidation of Silicon

4. Oxidation of silicon: Is there a slow interface reaction?

5. A revised analysis of dry oxidation of silicon

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