SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation-Reference-Cited by-同舟云学术

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SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation

Published:2017-08-14 Issue:6 Volume:122 Page:065306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Anthony R.¹,Haddara Y. M.²^ORCID,Crowe I. F.³,Knights A. P.¹

Affiliation:

1. Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada

2. Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario L8S 4K1, Canada

3. School of Electrical and Electronic Engineering and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, United Kingdom

Funder

Natural Sciences and Engineering Research Council of Canada (NSERC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4998457

Reference39 articles.

1. The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

2. Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

3. Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

4. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

5. Ge-Photodetectors for Si-Based Optoelectronic Integration

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1. Ion Beam Modification for Si Photonics;Physics;2022-03-22

2. Cooperative assembly of redistributed arylgermanium-bearing alkoxysilanes in a mesostructured siloxane network;New Journal of Chemistry;2022

3. Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides;ECS Journal of Solid State Science and Technology;2020-11-16

4. Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications;Journal of Physics Communications;2019-07-01

5. Strain analysis of SiGe microbridges;Silicon Photonics XIII;2018-02-22

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