Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93200
Reference13 articles.
1. The orientation dependent diffusion of boron in silicon under oxidizing conditions
2. On phosphorus diffusion in silicon under oxidizing atmospheres
3. The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in Silicon
4. Diffraction contrast analysis of two-dimensional defects present in silicon after annealing
5. Formation of stacking faults and enhanced diffusion in the oxidation of silicon
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