Roles of strain and carrier in silicon oxidation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab82a9/pdf
Reference190 articles.
1. The High Temperature Oxidation of Silicon
2. The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor
3. X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics
4. Atomic scale model interfaces between high-khafnium silicates and silicon
5. Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
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