Epitaxial Ge-rich silicon layers after dry oxidation of Ge implanted silicon
Author:
Funder
University of Aveiro
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference27 articles.
1. A comparative analysis of oxidation rates for thin films of SiGe versus Si;Long;Phys. Status Solidi,2012
2. Thermal oxidation of Si (001) single crystal implanted with Ge ions;Terrasi;J. Appl. Phys.,2002
3. Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure;Yang;J. Appl. Phys.,2009
4. Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing;Tyschenko;Solid State Commun.,2016
5. Growth kinetics and related physical/electrical properties of Ge quantum dots formed by thermal oxidation of Si1-xGex-on-insulator;Lai;Nanotechnology,2007
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