Growth kinetics and related physical/electrical properties of Ge quantum dots formed by thermal oxidation of Si1−xGex-on-insulator
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/18/i=14/a=145402/pdf
Reference25 articles.
1. Room-temperature transient carrier transport in germanium single-hole/electron transistors
2. Volatile and non-volatile memories in silicon with nano-crystal storage
3. Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12
4. Visible photoluminescence of Ge microcrystals embedded in SiO2glassy matrices
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