‘Symbiotic’ semiconductors: unusual and counter-intuitive Ge/Si/O interactions-Reference-Cited by-同舟云学术

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‘Symbiotic’ semiconductors: unusual and counter-intuitive Ge/Si/O interactions

Published:2017-02-09 Issue:10 Volume:50 Page:105101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

George T,Li P W,Chen K H,Peng K P,Lai W T

Funder

National Science Council of Republic of China, Taiwan

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/50/i=10/a=105101/pdf

Reference23 articles.

1. Selective Oxidation of SiGe Alloys: A Route to Ge-on-Insulator Structures with Controlled Biaxial Strain

2. Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy

3. Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing

4. Effects of Ge concentration on SiGe oxidation behavior

5. Oxidation studies of SiGe

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1. Self-Organized Germanium Quantum Dots/Si₃N₄ Enabling Monolithic Integration of Top Si₃N₄-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing;IEEE Transactions on Electron Devices;2023-04

2. Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes;IEEE Journal of the Electron Devices Society;2023

3. Monolithic Integration of Top Si₃N₄ - Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing;2022 International Electron Devices Meeting (IEDM);2022-12-03

4. The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins;ACS APPL MATER INTER;2022

5. The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins;ACS Applied Materials & Interfaces;2022-06-16

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