Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes-Reference-Cited by-同舟云学术

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Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes

Published:2023 Issue: Volume:11 Page:54-59
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Lai Chi-Cheng¹^ORCID,Pan R. C.¹,Wang I-Hsiang¹,George T.¹,Lin Horng-Chih¹,Li Pei-Wen¹^ORCID

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

National Science and Technology Council

Higher Education Sprout Project of National Yang Ming Chiao Tung University and Ministry of Education, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10012410.pdf?arnumber=10012410

Reference32 articles.

1. Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

2. ‘Symbiotic’ semiconductors: unusual and counter-intuitive Ge/Si/O interactions

3. Single Germanium Quantum-dot Placement Along With Self-Aligned Electrodes for Effective Management of Single Charge Tunneling

4. Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques

5. Single to quadruple quantum dots with tunable tunnel couplings

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1. Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement;Scientific Reports;2024-09-05

2. Mapping the Ge/InAl(Ga)As interfacial electronic structure and strain relief mechanism in germanium quantum dots;Journal of Materials Chemistry C;2024

3. Determination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pumping;Scientific Reports;2023-08-31

4. Synergy of cold development and electron-beam exposure for Si nanotip patterning in quantum-electronic devices;Journal of Vacuum Science & Technology B;2023-08-18

5. Integrable Germanium Few-Hole Double Quantum-Dots and Single-Hole Transistors using CMOS Fabrication Apporaches;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11

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