Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement
Author:
Funder
National Science and Technology Council
Publisher
Springer Science and Business Media LLC
Link
https://www.nature.com/articles/s41598-024-71177-w.pdf
Reference22 articles.
1. Angus, S. J., Ferguson, A. J., Dzurak, A. S. & Clark, R. G. Gate-defined quantum dots in intrinsic silicon. Nano Lett. 7, 2051–2055. https://doi.org/10.1021/nl070949k (2007).
2. Zwerver, A. et al. Qubits made by advanced semiconductor manufacturing. Nat. Electron. 5, 184–190. https://doi.org/10.1038/s41928-022-00727-9 (2022).
3. Lawrie, W. et al. Quantum dot arrays in silicon and germanium. Appl. Phys. Lett. 116, 080501. https://doi.org/10.1063/5.0002013 (2020).
4. Higginbotham, A. et al. Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Lett. 14, 3582–3586. https://doi.org/10.1021/nl501242b (2014).
5. Lai, N. et al. Pauli spin blockade in a highly tunable silicon double quantum dot. Sci. Rep. 1, 110. https://doi.org/10.1038/srep00110 (2011).
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