Mapping the Ge/InAl(Ga)As interfacial electronic structure and strain relief mechanism in germanium quantum dots-Reference-Cited by-同舟云学术

Mapping the Ge/InAl(Ga)As interfacial electronic structure and strain relief mechanism in germanium quantum dots

Published:2024 Issue:35 Volume:12 Page:14062-14073
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hudait Mantu K.¹^ORCID,Bhattacharya S.¹^ORCID,Karthikeyan S.¹^ORCID,Zhao J.²,Bodnar R. J.²^ORCID,Magill B. A.³^ORCID,Khodaparast G. A.³^ORCID

Affiliation:

1. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA

2. Fluids Research Laboratory, Department of Geosciences, Virginia Tech, Blacksburg, Virginia 24061, USA

3. Department of Physics, Virginia Tech, Blacksburg, Virginia, 24061, USA

Abstract

Germanium quantum dots (QDs) with defect-free regions and clusters of stacking faults (SFs) relieved the strain from Ge QDs.

Funder

Division of Electrical, Communications and Cyber Systems

Air Force Office of Scientific Research

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01587H

Reference45 articles.

1. Tensile-Strained Nanoscale Ge/In0.16Ga0.84As Heterostructure for Tunnel Field-Effect Transistor

2. Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

3. Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

4. Performance Evaluation of Novel Strain-Engineered Ge-InGaAs Heterojunction Tunnel Field-Effect Transistors

5. Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors