Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors-Reference-Cited by-同舟云学术

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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Published:2013-05-13 Issue:19 Volume:102 Page:192103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wirths S.,Tiedemann A. T.,Ikonic Z.,Harrison P.,Holländer B.,Stoica T.,Mussler G.,Myronov M.,Hartmann J. M.,Grützmacher D.,Buca D.,Mantl S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4805034

Reference21 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches

2. J. Knoch and J. Appenzeller, in Device Research Conference Digest (IEEE, 2005), p. 153.

3. Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

4. Electronic band structure and effective mass parameters of Ge1-xSnx alloys

5. Impact of field-induced quantum confinement in tunneling field-effect devices

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