Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3048543
Reference33 articles.
1. Optimization of the luminescence emission in nanocrystalline SiGe/SiO2multilayers
2. Memory characterization of SiGe quantum dot flash memories with HfO/sub 2/ and SiO/sub 2/ tunneling dielectrics
3. Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
4. Correlation between barrier height and band offsets in metal/Si1−xGex/Si heterostructures
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1. Optimizing SiGe–SiO2 Visible–Short‐Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing;Advanced Photonics Research;2024-06-19
2. Hole mobility enhancement in strained nanocrystalline architecture of group IV semiconductors;Journal of Alloys and Compounds;2020-04
3. SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared;Scientific Reports;2020-02-24
4. Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si–Ge Nanoscale Thin Films;ACS Applied Materials & Interfaces;2020-02-03
5. Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study;Beilstein Journal of Nanotechnology;2019-09-17
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