Correlation between barrier height and band offsets in metal/Si1−xGex/Si heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122936
Reference18 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
2. The n-channel SiGe/Si modulation-doped field-effect transistor
3. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy
4. Properties of Schottky contact of Al on SiGe alloys
5. Schottky barrier heights on IV-IV compound semiconductors
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1. Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing;Journal of Applied Physics;2008-12-15
2. Realising wide bandgap P-SiC-emitter lateral heterojunction bipolar transistors with low collector–emitter offset voltage and high current gain: a novel proposal using numerical simulation;IEE Proceedings - Circuits, Devices and Systems;2004
3. A new dual-bandgap SiC-on-Si p-emitter, SiGe n-base, lateral Schottky metal-collector (PNM) HBT on SOI with reduced collector-emitter offset voltage;TENCON 2003. Conference on Convergent Technologies for Asia-Pacific Region;2003
4. Structural and electrical characteristics of chemical vapor deposited W/n-Si0.83Ge0.17/Si(001) and chemical vapor deposited WSix/n-Si0.83Ge0.17/Si(001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07
5. Fermi level position at metal Si1−x−yGexCy interfaces;Journal of Applied Physics;2001-05-15
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