Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3259396
Reference17 articles.
1. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/
2. Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure
3. Electronic properties of Ge nanocrystals for non volatile memory applications
4. Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
5. Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals
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