Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1567039
Reference14 articles.
1. The structural and luminescence properties of porous silicon
2. Growth of Ge Microcrystals in SiO2Thin Film Matrices: A Raman and Electron Microscopic Study
3. Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2
4. The role of quantum‐confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals
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