A Study on the Formation Processes and Microstructures of Ni Germanosilicide Films on Si[sub 1−x]Ge[sub x](x=0.1 and 0.2)

Author:

Do Kihoon,Lee Doosung,Kim Jisun,Kim Hyoungsub,Ko Dae-Hong

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. First stages of Ni reaction with the Si(Ge) alloy;Journal of Alloys and Compounds;2017-02

2. Effect of Sn implantation on thermal stability improvement of NiSiGe;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

3. Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation;Electrochemical and Solid-State Letters;2011

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