Author:
Zhang B.,Yu W.,Zhao Q. T.,Buca D.,Holländer B.,Hartmann J. M.,Zhang M.,Wang X.,Mantl S.
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering
Reference18 articles.
1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends
2. Epitaxial Formation of a Metastable Hexagonal Nickel–Silicide
3. W. Yu, E. D. Özben, B. Zhang, A. Nichau, J. M. J. Lopes, R. Lupták, S. Lenk, J. M. Hartmann, D. Buca, K. K. Bourdelle, et al. , in
Proceeding of 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010
, IEEE, 875 (2010).
4. Nickel-based contact metallization for SiGe MOSFETs: progress and challenges
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