Effect of Sn implantation on thermal stability improvement of NiSiGe-Reference-Cited by-同舟云学术

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Effect of Sn implantation on thermal stability improvement of NiSiGe

Published:2015-12 Issue: Volume:365 Page:120-122
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang B.,Meng X.,Ping Y.,Yu W.,Xue Z.,Wei X.,Di Z.,Zhang M.,Wang X.

Funder

Natural Science Foundation of Shanghai

National Natural Science Foundation of China

Innovation Project of Chinese Academy of Sciences

Natural Science Foundation of Shanghai University of Engineering Science

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends

2. Epitaxial Formation of a Metastable Hexagonal Nickel–Silicide

3. Hole Mobilities of $\hbox{Si/Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well Transistor on SOI and Strained SOI

4. Nickel-based contact metallization for SiGe MOSFETs: progress and challenges

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness;ECS Journal of Solid State Science and Technology;2020-06-15

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