Ti mediated highly oriented growth of uniform and smooth Ni(Si0.8Ge0.2) layer for advanced contact metallization-Reference-Cited by-同舟云学术

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Ti mediated highly oriented growth of uniform and smooth Ni(Si0.8Ge0.2) layer for advanced contact metallization

Published:2017-02 Issue: Volume:693 Page:527-533
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Ping Yunxia,Hou Chunlei,Zhang Chaomin,Yu Wenjie,Xue Zhongying,Wei Xing,Peng Wei,Di Zengfeng,Zhang Miao,Zhang Bo

Funder

Natural Science Foundation of Shanghai

National Natural Science Foundation of China

Innovation Project of Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference26 articles.

1. Metal silicides in CMOS technology:past, present, and future trends;Zhang;Crit. Rev. Solid State Mater. Sci.,2003

2. Towards implementation of a nickel silicide process for CMOS technologies;Lavoie;Microelectron. Eng.,2003

3. Epitaxial formation of a metastable hexagonal nickel-silicide;De Keyser;Electrochem. Solid-State Lett.,2008

4. Influence of structural variation of Ni silicide thin films on electrical property for contact materials;Okubo;Jpn. J. Appl. Phys.,2004

5. Phase formation and thermal stability of ultrathin nickel-silicides on Si(100);De Keyser;Appl. Phys. Lett.,2010

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ti Interlayer Mediated Uniform NiGe Formation under Low-Temperature Microwave Annealing;Metals;2021-03-15

2. Reaction of titanium-modulated nickel with germanium-tin under microwave and rapid thermal annealing;Acta Physica Sinica;2021

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