Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials-Reference-Cited by-同舟云学术

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Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials

Published:2004-04-27 Issue:4B Volume:43 Page:1896-1900
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okubo Kazuya,Tsuchiya Yoshinori,Nakatsuka Osamu,Sakai Akira,Zaima Shigeaki,Yasuda Yukio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure and Properties of Thin-Film Submicrostructures Obtained by Rapid Thermal Treatment of Nickel Films on Silicon;Surfaces;2024-03-27

2. New insights on Ni-Si system for microelectronics applications;Microelectronic Engineering;2022-08

3. Ti mediated highly oriented growth of uniform and smooth Ni(Si0.8Ge0.2) layer for advanced contact metallization;Journal of Alloys and Compounds;2017-02

4. Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-05

5. Structural and Electrical Properties of Ni-Germanosilicides Formed Using Pulsed KrF Laser Annealing;Journal of Computational and Theoretical Nanoscience;2015-05-01

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