High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1738514
Reference15 articles.
1. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
4. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs
5. Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs
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1. Strain scaling for CMOS;MRS Bulletin;2014-02
2. Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator;Applied Surface Science;2010-03
3. Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics;Applied Surface Science;2010-03
4. Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate;Chinese Physics Letters;2009-10-29
5. The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?;Materials Science in Semiconductor Processing;2008-10
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