Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1351861
Reference22 articles.
1. Highly uniform InGaAs quantum dots ( ≈ nm) grown by MOVPE on GaAs
2. Structural and optical properties of self-assembled InGaAs quantum dots
3. Self-organization processes in MBE-grown quantum dot structures
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. Self-organized quantum dots and quantum dot lasers (invited)
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1. MOVPE grown InGaAs quantum dots with emission near 1.3 μm for electrically driven single-photon sources;Journal of Crystal Growth;2023-03
2. High-speed InAs quantum dot photodetectors for data/telecom;Photodetectors;2023
3. Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties;Japanese Journal of Applied Physics;2022-07-28
4. Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties;Japanese Journal of Applied Physics;2021-02-24
5. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm;Applied Physics Letters;2014-10-13
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