Highly uniform InGaAs quantum dots ( ≈ nm) grown by MOVPE on GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference3 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Abstracts 6th Int. Conf. on InP and Related Materials;Reaves,1994
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