Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm-Reference-Cited by-同舟云学术

Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm

Published:2014-10-13 Issue:15 Volume:105 Page:152102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Goldmann Elias¹,Paul Matthias²,Krause Florian F.³,Müller Knut³,Kettler Jan²,Mehrtens Thorsten³,Rosenauer Andreas³,Jetter Michael²,Michler Peter²,Jahnke Frank¹

Affiliation:

1. Institute of Theoretical Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

2. Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

3. Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4898186

Reference23 articles.

1. Single Semiconductor Quantum Dots

2. Electrically driven telecommunication wavelength single-photon source

3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

4. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

5. Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

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