Evidence of interface conversion and electrical characteristics improvement of ultra-thin HfTiO films upon rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3658396
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1. Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics
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4. Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
5. Effects of Ti incorporation on the interface properties and band alignment of HfTaOx thin films on sulfur passivated GaAs
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1. Hf-Based High-κ Dielectrics: A Review;Acta Physica Polonica A;2019-12
2. Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method;Journal of Materials Science: Materials in Electronics;2018-11-13
3. The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD;Nanoscale Research Letters;2017-03-29
4. Microstructure, optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films;Ceramics International;2016-08
5. Evaluation of Radiation Sensor Aspects of $\text{Er}_2$$\text{O}_3$ MOS Capacitors under Zero Gate Bias;IEEE Transactions on Nuclear Science;2016-04
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