A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation-Reference-Cited by-同舟云学术

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A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation

Published:2011-01 Issue:1 Volume:46 Page:76-84
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Kolar Pramod,Karl Eric,Bhattacharya Uddalak,Hamzaoglu Fatih,Nho Henry,Ng Yong-Gee,Wang Yih,Zhang Kevin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/5673672/05621844.pdf?arnumber=5621844

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