The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

Author:

Feng Xing-Yao,Liu Hong-Xia,Wang Xing,Zhao Lu,Fei Chen-Xi,Liu He-Lei

Funder

National Natural Science Foundation of China

Foundation for Fundamental Research of China

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Ye C, Wang Y, Zhang J et al (2011) Evidence of interface conversion and electrical characteristics improvement of ultra-thin HfTiO films upon rapid thermal annealing. Appl Phys Lett 99(18):182904

2. Liu J, Liao M, Imura M et al (2014) Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric. Scientific Reports 4(7416):6395–6395

3. Liu JW, Liao MY, Imura M et al (2014) Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material. J Phys D Appl Phys 47(24):113–116

4. He G, Chen X, Sun Z (2013) Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates. Surf Sci 68(1):68–107

5. He G, Deng B, Chen H et al (2013) Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks. APL Materials 1(1):091002

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