Microstructure, optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films-Reference-Cited by-同舟云学术

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Microstructure, optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films

Published:2016-08 Issue:10 Volume:42 Page:11640-11649
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Jiang S.S.,He G.,Gao J.,Xiao D.Q.,Jin P.,Li W.D.,Lv J.G.,Liu M.,Liu Y.M.,Sun Z.Q.

Funder

National Key Project of Fundamental Research

National Natural Science Foundation of China

Anhui Provincial Natural Science Foundation

Young Scientific Foundation of Anhui University

Anhui University

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Evidence of interface conversion and electrical characteristics improvement of ultrathin HfTiO films upon rapid thermal annealing;Ye;Appl. Phys. Lett.,2011

2. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation;He;J. Mater. Chem. C,2014

3. Electrical, optical and micro-structural properties of ultra-thin HfTiON films;Zhang;Appl. Surf. Sci.,2014

4. Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric;Liu;Sci. Rep.,2014

5. Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material;Liu;J. Phys. D: Appl. Phys.,2014

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4. Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO₂/Al₂O₃ Gate Dielectrics;IEEE Transactions on Electron Devices;2023-10

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