Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation-Reference-Cited by-同舟云学术

Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

Published:2014 Issue:27 Volume:2 Page:5299-5308
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

He Gang¹²³⁴⁵,Liu Jiangwei⁶⁷⁸,Chen Hanshuang¹²³⁴,Liu Yanmei¹²³⁴,Sun Zhaoqi¹²³⁴,Chen Xiaoshuang⁵⁹¹⁰¹¹,Liu Mao¹²¹³¹⁴⁹¹¹,Zhang Lide¹²¹³¹⁴⁹¹¹

Affiliation:

1. School of Physics and Materials Science

2. Radiation Detection Materials & Devices Lab

3. Anhui University

4. Hefei 230039, P.R. China

5. National Laboratory for Infrared Physics

6. Optical and Electronic Materials Unit

7. National Institute for Materials Science (NIMS)

8. Tsukuba, Japan

9. Chinese Academy of Sciences

10. Shanghai Institute of Technical Physics

11. , P.R. China

12. Key Laboratory of Materials Physics

13. Anhui Key Laboratory of Nanomaterials and Nanostructure

14. Institute of Solid State Physics

Abstract

Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric function, band alignment, and electrical properties of sputtering-derived HfTiO high-kgate dielectrics on GaAs substrates have been studied by angle resolved X-ray photoemission spectroscopy (ARXPS), spectroscopy ellipsometry (SE), and electrical measurements.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00572D

Reference49 articles.

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5. Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

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