Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer-Reference-Cited by-同舟云学术

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Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Published:2013-10-01 Issue:10 Volume:5 Page:1410-1417
ISSN:1947-2935
Container-title:Science of Advanced Materials
language:en
Short-container-title:sci adv mater

Author:

He Gang,Chen Xiaoshuang,Lv Jianguo,Chen Hanshuang,Deng Bin,Sun Zhaoqi

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment;ACS Omega;2019-07-05

2. The effect of the applied electric field on laser-induced damage of dielectric thin films;Materials Research Express;2017-01-20

3. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface;ACS Applied Materials & Interfaces;2016-06-23

4. Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure;Journal of Alloys and Compounds;2016-03

5. Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO2/Si gate stack;Journal of Alloys and Compounds;2015-10

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