Effects of Ti incorporation on the interface properties and band alignment of HfTaOx thin films on sulfur passivated GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3536520
Reference15 articles.
1. Energy-band alignments of HfO2 on p-GaAs substrates
2. Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate
3. Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric
4. Electrical and material characterizations of high-permittivity HfxTi1−xO2 gate insulators
5. Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
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