Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition-Reference-Cited by-同舟云学术

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Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition

Published:2016-04-29 Issue:8 Volume:27 Page:8550-8558
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Fei Chenxi,Liu Hongxia,Wang Xing,Zhao Dongdong,Wang Shulong

Funder

Project of National Natural Science Foundation of China

Specialized Research Fund for the Doctoral Program of High Education

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10854-016-4872-z.pdf

Reference31 articles.

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3. M. Suzuki, T. Yamaguchi, N. Fukushima, M. Koyama, J. Appl. Phys. 103, 034118 (2008)

4. B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J.H. Yi, H. Li, M. Rousseau, D. Shenai, J. Suydam, Microelectron. Eng. 86, 1658 (2009)

5. J.W. Liu, M.Y. Liao, M. Imura, H. Oosato, E. Watanabe, Y. Koide, Appl. Phys. Lett. 102, 112910 (2013)

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