Energy-band alignments of HfO2 on p-GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2839406
Reference19 articles.
1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
2. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)
3. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
4. Interfacial characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate
5. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
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