A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates
Author:
Affiliation:
1. School of Mechanics and Photoelectric Physics
2. Anhui University of Science and Technology
3. Huainan 232001
4. China
5. School of Physics and Materials Science
6. Radiation Detection Materials & Devices Lab
7. Anhui University
8. Hefei 230601
Abstract
Ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition were deposited on Si substrates. HfTiAlO possesses more excellent interface performance and electrical properties than HfTiO and TiAlO.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Anhui Province
Provincial Foundation for Excellent Young Talents of Colleges and Universities of Anhui Province
Anhui University
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA01073A
Reference35 articles.
1. Advanced Gate Stacks for High-Mobility Semiconductors , ed. A. Dimoulas , E. Gusev , P. McIntyre and M. Heyns , Springer , Berlin Heidelberg , 2007 , pp. 293–310
2. K.Choi , H.Jagannathan , C.Choi , L.Edge , T.Ando , M.Frank , P.Jamison , M.Wang , E.Cartier , S.Zafar and J.Bruley , 2009 Symposium on VSLI Technology , 2009 , pp. 138–139
3. Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics
4. Recent progress in ab initio simulations of hafnia-based gate stacks
5. Review and Perspective of Hf-based High-kGate Dielectrics on Silicon
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack;Journal of Physics D: Applied Physics;2020-11-10
2. Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN;ECS Journal of Solid State Science and Technology;2020-07-22
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