A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates

Author:

Gao Juan12345ORCID,He Gang56784,Hao Lin56784,Wang Die56784,Zhao Lin1234

Affiliation:

1. School of Mechanics and Photoelectric Physics

2. Anhui University of Science and Technology

3. Huainan 232001

4. China

5. School of Physics and Materials Science

6. Radiation Detection Materials & Devices Lab

7. Anhui University

8. Hefei 230601

Abstract

Ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition were deposited on Si substrates. HfTiAlO possesses more excellent interface performance and electrical properties than HfTiO and TiAlO.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Anhui Province

Provincial Foundation for Excellent Young Talents of Colleges and Universities of Anhui Province

Anhui University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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3. Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics

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